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2020-248 - Ferroelectric Tunnel Junction with Ultrahigh Tunnelling Electroresistance

Abstract USC inventors have developed a ferroelectric tunnel junction with improved barrier height modulation ability and ultrahigh TER. The device uses layered copper indium thiophosphate as the ferroelectric barrier and graphene and chromium as asymmetric contacts. The ferroelectric field effect of these materials can induce a barrier height modulation...

Published: 2/3/2026 Inventor(s): Han Wang, Hung-Yu Chen, Jiang-Bin Wu
Keywords(s):